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STB13007DT4
High voltage fast-switching NPN power transistor
General features
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 C Large RBSOA In compliance with the 2002/93/EC European Directive
1
D2PAK (T0-263)

3
Internal schematic diagram
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Applications

Electronic transformers for halogen lamps Switch mode power supplies
Order codes
Part Number STB13007DT4 Marking B13007D Package D 2PAK Packing Tape & Reel
June 2006
Rev 1
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STB13007DT4
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = -1.5V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Storage temperature Max. operating junction temperature Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W C C
Table 2.
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.56 62.5 Unit C/W C/W
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Electrical characteristics
STB13007DT4
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICES ICEO IEBO
Electrical characteristics
Parameter Collector cut-off current (VBE =0V) Collector cut-off current (IB =0) Emitter cut-off current (IC =0) Test Conditions VCE =700V VCE =700V VCE =400V VEB =9V Min. Typ. Max. 10 0.5 100 100 Unit A mA A A
Tc =100C
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0)
IC =10mA _ _ _ IB = 0.4A IC = 5 A __ _ IB = 1A IC = 8 A IC = 5 A __ _ IB = 2A __ _ IB = 1A IC = 2A
400 0.8 1.5 2 3
V V V V V
VCE(sat) (1)
Collector-emitter saturation voltage
Tc =100C
IC = 2A VBE(sat) (1) Base-emitter saturation voltage IC = 5A IC = 5A _ _ _ IB = 0.4A __ _ IB = 1A __ _ IB = 1A 1.2 1.6 1.5 V V V
Tc =100C
hFE Vf DC current gain Diode forward voltage Inductive load Storage time Fall time IC = 2A IC = 5A IC = 3A IC = 5A ___ VClamp = 250V IB1 = 1A RBB = 0 (see fig. 11) IC = 5A ___ VClamp = 250V IB1 = 1A RBB = 0 VBE(off) = -5V L = 200H (see fig. 11) 2.2 150 s ns VBE(off) = -5V L = 200H 1.7 90 2.3 150 s ns _ _VCE = 5V _VCE = 5V 18 8 40 25 2.5 V
ts tf
ts tf
Inductive load Storage time Fall time
Tc =125C
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Derating curve
Figure 3.
DC current gain
Figure 4.
DC current gain
Figure 5.
Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
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Electrical characteristics Figure 7. Diode forward voltage Figure 8.
STB13007DT4 Switching times inductive load
Figure 9.
Switching times inductive load
Figure 10. Reverse biased safe operating area
2.2
Test circuits
Figure 11. Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB13007DT4
TO-252 (DPAK) MECHANICAL DATA
DIM. MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
P032P_B
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Revision history
4
Revision history
Table 4.
Date 19-Jun-2006
Revision history
Revision 1 Initial release. Changes
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